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MRF6V4300NR1 MRF6V4300NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
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Typical CW Performance: VDD
=50Volts,IDQ
= 900 mA, Pout
= 300 Watts,
f = 450 MHz
Power Gain ? 22 dB
Drain Efficiency ? 60%
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Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
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Characterized with Series Equivalent Large--Signal Impedance Parameters
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Qualified Up to a Maximum of 50 VDD
Operation
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Integrated ESD Protection
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Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
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225°C Capable Plastic Package
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RoHS Compliant
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In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6V4300N
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
MRF6V4300NR1
MRF6V4300NBR1
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6V4300NBR1
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF6V4300NR1
10--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
PARTS ARE SINGLE--ENDED
(Top View)
RFout/VDS
Figure 1. Pin Connections
RFout/VDS
RFin/VGS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
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Freescale Semiconductor, Inc., 2008--2010.
All rights reserved.
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